Samsung Electronics says that it has developed the industry's first eight gigabit (Gb), low power double data rate 4 (LPDDR4), mobile DRAM.
The 8Gb LPDDR4 is fabricated on 20-nanometer (nm) class process technology, and offers 1 gigabyte (GB) on a single die, which is the largest density available for DRAM components today.
In addition, Samsung's new 8Gb LPDDR4 uses a Low Voltage Swing Terminated Logic (LVSTL) I/O interface, which was originally proposed by Samsung to JEDEC and has become a standard specification for LPDDR4 DRAM. Based on this new interface, the LPDDR4 chip will enable a data transfer rate per pin of 3,200 megabits per second (Mbps), which is twice that of the 20nm-class LPDDR3 DRAM now in mass production. Overall, the new LPDDR4 interface will provide 50 percent higher performance than the fastest LPDDR3 or DDR3 memory. Also, it consumes approximately 40 percent less energy at 1.1 volts.
"This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics.
With the new chip, Samsung said that it will focus on the premium mobile market including large screen UHD smartphones, tablets and ultra-slim notebooks, and also on high-performance network systems.
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